hole mobility
[/hoʊl moʊˈbɪləti/]
noun
mobilidade de lacunas
1. The ease with which holes (positive charge carriers) move through a semiconductor material under the influence of an electric field, typically measured in cm²/(V·s)
The hole mobility in silicon is lower than electron mobility, affecting device performance.
A mobilidade de lacunas no silício é menor que a mobilidade de elétrons, afetando o desempenho do dispositivo.
2. A key parameter in semiconductor physics that determines the conductivity contribution of holes in p-type materials
Engineers must consider hole mobility when designing p-channel MOSFETs.
Os engenheiros devem considerar a mobilidade de lacunas ao projetar MOSFETs de canal p.
This is a technical term used primarily in semiconductor physics, electrical engineering, and materials science. It is used identically in both American and Brazilian technical contexts, with no significant regional variations. The term is fundamental to understanding semiconductor device behavior and is taught in advanced physics and engineering curricula in both countries.
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